Title :
InGaN micro-LED-pillar as the building block for high brightness emitters
Author :
Chao Shen ; Tien Khee Ng ; Yang Yang ; Dongkyu Cha ; Ooi, Boon S.
Author_Institution :
Photonics Lab., King Abdullah Univ. of Sci. & Technol., Thuwal, Saudi Arabia
Abstract :
We confirmed the improved electrical and optical characteristics, with reduced efficiency droop in InGaN μLED-pillars when these devices were scaled down in size. We demonstrated that strain relief contributed to further improvement in EQE characteristics in small InGaN μLED-pillars (D <; 50 μm), apart from the current spreading effect. The μLED-pillar can be deployed as the building block for large effective-area, high brightness emitter.
Keywords :
III-V semiconductors; brightness; gallium compounds; indium compounds; light emitting diodes; wide band gap semiconductors; EQE characteristics; InGaN; current spreading effect; electrical characteristics; high brightness emitters; microLED-pillar; optical characteristics; reduced efficiency droop; strain relief; Brightness; Current density; Gallium nitride; Light emitting diodes; Quantum well devices; Strain;
Conference_Titel :
Photonics Conference (IPC), 2013 IEEE
Conference_Location :
Bellevue, WA
Print_ISBN :
978-1-4577-1506-8
DOI :
10.1109/IPCon.2013.6656491
