Title :
Two-dimensional Simulation Of GaAs MESFETs Including Impact Ionization Of Carriers And Carrier Trapping In The Semi-insulating Substrate
Author :
Horio, K. ; Satoh, K. ; Kusuki, H.
Author_Institution :
Shibaura Institute of Technology
Keywords :
Charge carrier processes; Chromium; Electric breakdown; Electron traps; Gallium arsenide; Impact ionization; MESFETs; Modeling; Poisson equations; Voltage;
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
DOI :
10.1109/VPAD.1993.724739
