Title :
Impact of Source-Drain Tunneling on Double-Gate Performance
Author :
Spinelli, A.S. ; Gusmeroli, R.
Author_Institution :
Dipt. di Elettronica e Informazione, Politecnico di Milano
Abstract :
We investigate the effects of source-drain tunneling on the performance of double-gate MOS devices with a 2D quantum-mechanical model. We show that a clear signature of the source-drain tunneling current is observable in the subthreshold behavior, affecting device performance even at room temperature. Dependences of the tunneling current on the main design variables are then analyzed in detail
Keywords :
MIS devices; semiconductor device models; tunnelling; 2D quantum-mechanical model; design variables; double-gate MOS devices; double-gate performance; source-drain tunneling; subthreshold behavior; Doping; Geometry; Ionization; MOS devices; Poisson equations; Scalability; Schrodinger equation; Solid modeling; Temperature; Tunneling;
Conference_Titel :
Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2006. EuroSime 2006. 7th International Conference on
Conference_Location :
Como
Print_ISBN :
1-4244-0275-1
DOI :
10.1109/ESIME.2006.1643988
