Title :
Numerical analysis of integrated bipolar magnetotransistors
Author :
Dima, G. ; Govoreanu, B. ; Mouthaan, T. ; Profirescu, M.D.
Author_Institution :
EDIL Lab., Bucharest Univ., Romania
Abstract :
The operation of dual-collector vertical bipolar magnetotransistors (VMT) is analysed using the 2D process/device simulator TRENDY. This way insight in the device behaviour can be obtained by means of the internal distribution of all variables that are not accessible to experiments. By variation of device geometry, doping profile and terminal voltages/currents we are able to obtain “rules” for the optimisation of integrated magnetic microsensors
Keywords :
bipolar transistors; magnetic sensors; microsensors; semiconductor device models; 2D process/device simulator; TRENDY; dual-collector vertical bipolar magnetotransistor; integrated magnetic microsensor; numerical analysis; optimisation; Analytical models; Geometry; Magnetic analysis; Magnetic devices; Magnetic fields; Magnetic semiconductors; Magnetic sensors; Numerical analysis; Poisson equations; Scattering;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557371
