Title :
Fully Ion-Implanted and Screen-Printed 20.2% Efficient Front Junction Silicon Cells on 239 cm
n-Type CZ Substrate
Author :
Yuguo Tao ; Young-Woo Ok ; Zimbardi, Francesco ; Upadhyaya, Ajay D. ; Jiun-Hong Lai ; Ning, Sheyang ; Upadhyaya, Vijaykumar D. ; Rohatgi, Ajeet
Author_Institution :
Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
In this study, we present fully ion-implanted screen-printed high-efficiency 239 cm2 n-type silicon solar cells that are fabricated on pseudosquare Czochralski wafers. Implanted boron emitter and phosphorous back-surface field (BSF) were optimized to produce n-type front junction cells with front and back SiO2 /SiNx surface passivation and rear point contacts. Average efficiency of 19.8%, with the best efficiency of 20.2%, certified by Fraunhofer ISE, Freiburg, Germany, was achieved. In addition, the planarized rear side gave better surface passivation, in combination with optimized BSF profile, raised the average efficiency to ~20% for the fully implanted and screen-printed n-type passivated emitter, rear totally diffused cells.
Keywords :
elemental semiconductors; ion implantation; passivation; planarisation; semiconductor doping; silicon; solar cells; Si; average efficiency; back surface passivation; front surface passivation; fully implanted n-type passivated emitter rear totally diffused cell; fully ion-implanted efficient front junction silicon cell; fully ion-implanted screen-printed high-efficiency n-type silicon solar cells; implanted boron emitter; n-type CZ substrate; optimized BSF profile; phosphorous back-surface field; planarized rear side; pseudosquare Czochralski wafers; rear point contacts; screen-printed efficient front junction silicon cell; screen-printed n-type passivated emitter rear totally diffused cell; Educational institutions; Passivation; Photovoltaic cells; Photovoltaic systems; Silicon; Surface texture; Back-surface field (BSF); ion implantation; n-type wafer; planarization; screen printed;
Journal_Title :
Photovoltaics, IEEE Journal of
DOI :
10.1109/JPHOTOV.2013.2281106