DocumentCode
2115033
Title
The development of IGCT-based large capacity three-level dual-PWM converter
Author
Zhiming, Lan ; CHongjian, Li ; Yaohua, Li ; Chunyi, Zhu ; Chengsheng, Wang
fYear
2011
fDate
May 30 2011-June 3 2011
Firstpage
2886
Lastpage
2890
Abstract
In media and high voltage large capacity converter systems the Integrated Gate Commutated Thyristor (IGCT) take the place of Gate Turn Off Thyristor (GTO) duo to its outstanding performance. And IGCT-based large capacity three-level converters are widely used in industrial motor-driving field. In this paper the development of a set of IGCT-based large capacity three level dual-PWM converter is introduced. The converter includes PWM rectifier, DC capacitors, PWM inverter. The topology of the converter is given. The close-loop control strategy and SVPWM algorithm of PWM rectifier is presented in this paper. The control strategy and algorithm of the PWM inverter is also presented. The experiments were performed and the results show that the converter reaches the design requirement and has excellent performance.
Keywords
PWM invertors; PWM power convertors; PWM rectifiers; closed loop systems; thyristors; DC capacitors; IGCT; PWM inverter; PWM rectifier; SVPWM algorithm; close-loop control; gate turn off thyristor; high voltage large capacity converter; industrial motor-driving field; integrated gate commutated thyristor; three-level dual-PWM converter; Frequency modulation; Harmonic analysis; Inverters; Rectifiers; Space vector pulse width modulation; Switches; IGCT; converter; dual-PWM; three-level;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and ECCE Asia (ICPE & ECCE), 2011 IEEE 8th International Conference on
Conference_Location
Jeju
ISSN
2150-6078
Print_ISBN
978-1-61284-958-4
Electronic_ISBN
2150-6078
Type
conf
DOI
10.1109/ICPE.2011.5944787
Filename
5944787
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