• DocumentCode
    2115033
  • Title

    The development of IGCT-based large capacity three-level dual-PWM converter

  • Author

    Zhiming, Lan ; CHongjian, Li ; Yaohua, Li ; Chunyi, Zhu ; Chengsheng, Wang

  • fYear
    2011
  • fDate
    May 30 2011-June 3 2011
  • Firstpage
    2886
  • Lastpage
    2890
  • Abstract
    In media and high voltage large capacity converter systems the Integrated Gate Commutated Thyristor (IGCT) take the place of Gate Turn Off Thyristor (GTO) duo to its outstanding performance. And IGCT-based large capacity three-level converters are widely used in industrial motor-driving field. In this paper the development of a set of IGCT-based large capacity three level dual-PWM converter is introduced. The converter includes PWM rectifier, DC capacitors, PWM inverter. The topology of the converter is given. The close-loop control strategy and SVPWM algorithm of PWM rectifier is presented in this paper. The control strategy and algorithm of the PWM inverter is also presented. The experiments were performed and the results show that the converter reaches the design requirement and has excellent performance.
  • Keywords
    PWM invertors; PWM power convertors; PWM rectifiers; closed loop systems; thyristors; DC capacitors; IGCT; PWM inverter; PWM rectifier; SVPWM algorithm; close-loop control; gate turn off thyristor; high voltage large capacity converter; industrial motor-driving field; integrated gate commutated thyristor; three-level dual-PWM converter; Frequency modulation; Harmonic analysis; Inverters; Rectifiers; Space vector pulse width modulation; Switches; IGCT; converter; dual-PWM; three-level;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and ECCE Asia (ICPE & ECCE), 2011 IEEE 8th International Conference on
  • Conference_Location
    Jeju
  • ISSN
    2150-6078
  • Print_ISBN
    978-1-61284-958-4
  • Electronic_ISBN
    2150-6078
  • Type

    conf

  • DOI
    10.1109/ICPE.2011.5944787
  • Filename
    5944787