DocumentCode
2115098
Title
Low temperature threshold current density effect by p-doping in InP/AlGaInP quantum dot laser diodes
Author
Al-Ghamdi, M.S. ; Smowton, P.M. ; Krysa, A.B.
Author_Institution
Dept. of Phys., King Abdulaziz Univ., Jeddah, Saudi Arabia
fYear
2013
fDate
8-12 Sept. 2013
Firstpage
238
Lastpage
239
Abstract
We demonstrate the effect of p-doping on threshold current density at low temperatures which shows distinctive behavior explained by spontaneous emission spectra taken at thresholds. Their full width half maximum accompanied with carrier distribution is higher in p-doped structure compare to undoped one.
Keywords
III-V semiconductors; aluminium compounds; current density; gallium compounds; indium compounds; quantum dot lasers; semiconductor doping; spontaneous emission; InP-AlGaInP; carrier distribution; low temperature threshold current density effect; p-doping; quantum dot laser diodes; spontaneous emission spectra; Doping; Indium phosphide; Measurement by laser beam; Spontaneous emission; Temperature distribution; Temperature measurement; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2013 IEEE
Conference_Location
Bellevue, WA
Print_ISBN
978-1-4577-1506-8
Type
conf
DOI
10.1109/IPCon.2013.6656524
Filename
6656524
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