Title :
A Numerical Simulation Study Of SiGe/Si-heterostructured PMOS And Dipolar Devices
Author :
Kuo, J.B. ; Chen, B.Y. ; Chen, H.P. ; Lu, T.C. ; Sim, J.H.
Author_Institution :
National Taiwan University
Keywords :
Design optimization; Doping; Germanium silicon alloys; MOS devices; Microelectronics; Numerical simulation; Photonic band gap; Silicon germanium; Transconductance; Very large scale integration;
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
DOI :
10.1109/VPAD.1993.724741
