Title :
A new large-signal model for double barrier resonant tunneling diodes for frequency multiplier applications
Author :
Neculoiu, Dan ; Tebeanu, Teodor ; Sztojanov, I.
Author_Institution :
Univ. Politehnica, Bucharest, Romania
Abstract :
The paper presents a new double barrier resonant tunneling diode large-signal model, suitable for the design of microwave frequency multiplier circuits. The model is based on the device I-V characteristic and the model parameters can be easily extracted from measured data. The model is used to design a frequency multiplier circuit and to estimate its conversion efficiency. The results are in good agreement with those, obtained using an optimization program based on harmonic balance technique
Keywords :
frequency multipliers; microwave circuits; resonant tunnelling diodes; semiconductor device models; conversion efficiency; device I-V characteristic; double barrier resonant tunneling diodes; frequency multiplier applications; frequency multiplier circuit; harmonic balance technique; large-signal model; microwave frequency multiplier circuits; model parameters; optimization program; Circuit synthesis; Coupling circuits; Diodes; Equivalent circuits; Fourier series; Frequency domain analysis; Power generation; Resonance; Spline; Voltage;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651177
