Title :
Single atom calculation in silicon
Author_Institution :
Sch. of Fundamental Sci. & Technol., Keio Univ., Yokohama, Japan
Abstract :
Logic operations using single dopants in silicon are discussed. Among many shallow donors, substitutionally placed phosphorus donors have been playing the major roles in development of single-atom calculation in silicon. This presentation describes the current status and future outlook of electronics based on single atomic calculation in silicon.
Keywords :
elemental semiconductors; silicon; Si; electronics; logic operations; phosphorus donors; shallow donors; single atom calculation; single dopants; Coherence; Computers; Fabrication; Nanoscale devices; Quantum computing; Silicon; Wires; phoshorus donors; quantum calculation; silicon;
Conference_Titel :
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-145-8
Electronic_ISBN :
978-1-61284-147-2
DOI :
10.1109/IMFEDK.2011.5944823
