The role of high-doped source and drain on device performance in nano-scale Si-MOSFETs

Author

Sano, Nobuyuki

Author_Institution

Inst. of Appl. Phys., Univ. of Tsukuba, Tsukuba, Japan

fYear

2011

fDate

19-20 May 2011

Firstpage

22

Lastpage

23

Abstract

Monte Carlo simulations coupled self-consistently with the 3D Poisson equation under the Double-Gate MOSFET structures are carried out to investigate quantitatively the dynamical potential fluctuations of the Coulomb interaction. It is shown that the potential fluctuations lead to the band-tail in the space-averaged density of states and it becomes position-dependent even inside the source where quasi-equilibrium is usually presumed. This implies that electrons in the source near the channel could be under highly off-equilibrium.

Keywords

MOSFET; Monte Carlo methods; elemental semiconductors; nanoelectronics; silicon; 3D Poisson equation; Coulomb interaction; Monte Carlo simulations; Si; double-gate MOSFET; high-doped source; nanoscale Si-MOSFET; quasiequilibrium; space-averaged state density; Electric potential; Fluctuations; Force; MOSFET circuits; Mathematical model; Monte Carlo methods; Scattering; Coulomb interaction; MOSFET; Monte Carlo method; band-tail; elctron transport; potential fluctuation;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-61284-145-8

Electronic_ISBN

978-1-61284-147-2

Type

conf

DOI

10.1109/IMFEDK.2011.5944825

Filename

5944825