DocumentCode
2116007
Title
Silicon Multi-Stage Current-Mode Piezoresistive Pressure Sensor
Author
de Oliveira Coraucci, Guilherme ; Fruett, Fabiano
Author_Institution
Dept. of Semicond., Instrum. & Photonics, Univ. of Campinas-UNICAMP, Campinas, Brazil
fYear
2010
fDate
1-4 Nov. 2010
Firstpage
1770
Lastpage
1774
Abstract
This paper describes the project of a Silicon Multi-Stage Current-Mode Piezoresistive Pressure Sensor fabricated at our in-house foundry (CCS-UNICAMP). This current-mode pressure sensor is an alternative to the conventional piezoresistive pressure sensors based on the Wheatstone Bridge or four-terminal devices. This sensor is based on the three-terminal pressure sensors. In three-terminal devices, one terminal is used as biasing terminal while the other two are the output terminals. The output signal is proportional to the current mismatching AIbias between two output terminals. By considering multiple pairs of output terminals, the influence of the geometry of the sensor over its sensitivity is verified. The Piezoresistive Sensing Element (PSE) is entirely integrated and designed in such a way that its sensitivity is maximized. The experimental maximum differential sensitivity of the sensor output current relative change amounts to about 0.6%/psi.
Keywords
elemental semiconductors; foundries; piezoresistive devices; pressure sensors; silicon; CCS-UNICAMP foundry; Si; biasing terminal; current mismatch; multistage current mode piezoresistive pressure sensor; piezoresistive sensing element; three terminal pressure sensor;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2010 IEEE
Conference_Location
Kona, HI
ISSN
1930-0395
Print_ISBN
978-1-4244-8170-5
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2010.5689965
Filename
5689965
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