DocumentCode
2116052
Title
Electron Transport Models For Unstrained And Strained Si And SiGe
Author
Ershov, M. ; Ryzhii, V.
Author_Institution
Russian Academy of Sciences
fYear
1993
fDate
14-15 May 1993
Firstpage
110
Lastpage
111
Keywords
Electron mobility; Germanium alloys; Germanium silicon alloys; Impact ionization; Kinetic theory; MOSFET circuits; Scattering; Silicon alloys; Silicon germanium; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN
0-7803-1338-0
Type
conf
DOI
10.1109/VPAD.1993.724744
Filename
724744
Link To Document