DocumentCode :
2116052
Title :
Electron Transport Models For Unstrained And Strained Si And SiGe
Author :
Ershov, M. ; Ryzhii, V.
Author_Institution :
Russian Academy of Sciences
fYear :
1993
fDate :
14-15 May 1993
Firstpage :
110
Lastpage :
111
Keywords :
Electron mobility; Germanium alloys; Germanium silicon alloys; Impact ionization; Kinetic theory; MOSFET circuits; Scattering; Silicon alloys; Silicon germanium; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
Type :
conf
DOI :
10.1109/VPAD.1993.724744
Filename :
724744
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2116052
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