• DocumentCode
    2116098
  • Title

    Fabrication of semiconductor nanoparticles using electro spray deposition method

  • Author

    Doe, Takahiro ; Horita, Masahiro ; Nishida, Takashi ; Ishikawa, Yasuaki ; Uraoka, Yukiharu

  • Author_Institution
    Nara Inst. of Sci. & Technol., Ikoma, Japan
  • fYear
    2011
  • fDate
    19-20 May 2011
  • Firstpage
    32
  • Lastpage
    33
  • Abstract
    ZnS semiconductor nanoparticles were fabricated using electro spray process. We chose the electro spray deposition (ESD) method which is one of a particle preparation process from spray pyrolysis route. The ESD method, which produces nano-size droplets, combined with the evaporation of solvent of nano droplets can fabricate nanoparticle whose size are controlled to single nano order size and behave a quantum confinement effect. We successfully obtained 3.7 nm as the average size and 2.3 nm as the FWHM by precise controlled for the nozzle tip size and the applied voltage to 25 μm and 2.3 kV, respectively.
  • Keywords
    II-VI semiconductors; electrodeposition; materials preparation; nanofabrication; nanoparticles; pyrolysis; semiconductor growth; wide band gap semiconductors; zinc compounds; ESD method; FWHM; ZnS; electrospray deposition method; nanosize droplets; nozzle tip size; particle preparation process; quantum confinement effect; semiconductor nanoparticle fabrication; size 2.3 nm; size 25 mum; size 3.7 nm; spray pyrolysis route; voltage 2.3 V; Electrostatic discharge; Materials; Nanoparticles; Potential well; Printing; Spraying; Voltage control; Electro spray; Printing process; Semiconductor nanoparticles; ZnS;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
  • Conference_Location
    Osaka
  • Print_ISBN
    978-1-61284-145-8
  • Electronic_ISBN
    978-1-61284-147-2
  • Type

    conf

  • DOI
    10.1109/IMFEDK.2011.5944830
  • Filename
    5944830