Title :
Electrical and structural properties of organic thin-film transistor using very thin pentacene film
Author :
Heya, Akira ; Matsuo, Naoto ; Konaganezawa, Tomoyuki
Author_Institution :
Dept. of Mater. Sci. & Chem., Univ. of Hyogo, Himeji, Japan
Abstract :
Carrier conduction in organic thin-film transistor (OTFT) was investigated by using pentacene OTFT with various film thicknesses from 1 to 50nm. The Ion of 3nm OTFT was higher than that of 50nm OTFT. The lateral distance between pentacene molecules decreased with decreasing film thickness. It is considered that the triangle potential was formed at interface between pentacene and SiO2 in OTFT using very thin pentacene film. Therefore, the probability of the carrier scattering decreases for OTFT with 3nm thickness.
Keywords :
polymer films; silicon compounds; thin film transistors; SiO2; carrier conduction; carrier scattering; electrical properties; film thickness; organic thin-film transistor; pentacene OTFT; pentacene molecules; size 1 nm to 50 nm; structural properties; triangle potential; very thin pentacene film; Films; Organic thin film transistors; Pentacene; Silicon; Substrates; X-ray scattering; GIXD; OTFT; pentacene; quantum effect;
Conference_Titel :
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-145-8
Electronic_ISBN :
978-1-61284-147-2
DOI :
10.1109/IMFEDK.2011.5944831
