Electrical and structural properties of organic thin-film transistor using very thin pentacene film

Author

Heya, Akira ; Matsuo, Naoto ; Konaganezawa, Tomoyuki

Author_Institution

Dept. of Mater. Sci. & Chem., Univ. of Hyogo, Himeji, Japan

fYear

2011

fDate

19-20 May 2011

Firstpage

34

Lastpage

35

Abstract

Carrier conduction in organic thin-film transistor (OTFT) was investigated by using pentacene OTFT with various film thicknesses from 1 to 50nm. The I_on of 3nm OTFT was higher than that of 50nm OTFT. The lateral distance between pentacene molecules decreased with decreasing film thickness. It is considered that the triangle potential was formed at interface between pentacene and SiO₂ in OTFT using very thin pentacene film. Therefore, the probability of the carrier scattering decreases for OTFT with 3nm thickness.

Keywords

polymer films; silicon compounds; thin film transistors; SiO₂; carrier conduction; carrier scattering; electrical properties; film thickness; organic thin-film transistor; pentacene OTFT; pentacene molecules; size 1 nm to 50 nm; structural properties; triangle potential; very thin pentacene film; Films; Organic thin film transistors; Pentacene; Silicon; Substrates; X-ray scattering; GIXD; OTFT; pentacene; quantum effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-61284-145-8

Electronic_ISBN

978-1-61284-147-2

Type

conf

DOI

10.1109/IMFEDK.2011.5944831

Filename

5944831