Tight binding modeling of intermediate band solar cells based on InAs/GaAs quantum dot arrays

Author

Mehdipour, Amir ; Ogawa, Matsuto ; Souma, Satofumi

Author_Institution

Dept. of Electr. & Electron. Eng., Kobe Univ., Kobe, Japan

fYear

2011

fDate

19-20 May 2011

Firstpage

36

Lastpage

37

Abstract

We study the electronic structure of vertically stacked cubic quantum dots for the purpose of exploring the efficient design of quantum dot intermediate solar cells. We analyzed the dependence of the miniband levels and widths on the number of quantum dots as well as the inter-dot spacing by combining the finite element method and tight-binding method. Regarding the calculated energy band structure, the detailed balance model has been employed and the conversion efficiency has been estimated to be 56.3%.

Keywords

finite element analysis; gallium compounds; indium compounds; solar cells; GaAs; InAs; electronic structure; finite element method; inter-dot spacing; intermediate band solar cells; tight binding modeling; vertically stacked cubic quantum dots; Energy states; Finite element methods; Gallium arsenide; Photonic band gap; Photovoltaic cells; Quantum dots; Wave functions; Intermediate band solar cells; Quantum dots; finite element method; minibands; tight-binding method;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-61284-145-8

Electronic_ISBN

978-1-61284-147-2

Type

conf

DOI

10.1109/IMFEDK.2011.5944832

Filename

5944832