Title :
Thin film transistors and photo diodes fabricated on double-layered polycrystalline silicon films formed by green laser annealing
Author :
Yamasaki, Koji ; Machida, Emi ; Horita, Masahiro ; Ishikawa, Yasuaki ; Uraoka, Yukiharu
Author_Institution :
Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Ikoma, Japan
Abstract :
We investigate the characterization of thin film devices using double-layered polycrystalline silicon (poly-Si) films formed by green laser annealing. The simultaneous crystallization of the double-layered substrate was achieved. The crystalline quality of the upper poly-Si layer is slightly higher than that of the single-layered poly-Si films. Thin film transistors (TFTs) and thin film photo diodes (TFPDs) have been fabricated on the double-layered poly-Si films. TFTs and TFPDs show device operation.
Keywords :
laser beam annealing; photodiodes; thin film transistors; double-layered polycrystalline silicon films; green laser annealing; photodiodes; thin film transistors; Annealing; Crystallization; Films; Lasers; Silicon; Thin film transistors; green laser annealing; simultaneous crystallization; thin film device;
Conference_Titel :
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-145-8
Electronic_ISBN :
978-1-61284-147-2
DOI :
10.1109/IMFEDK.2011.5944837
