Thin film transistors and photo diodes fabricated on double-layered polycrystalline silicon films formed by green laser annealing

Author

Yamasaki, Koji ; Machida, Emi ; Horita, Masahiro ; Ishikawa, Yasuaki ; Uraoka, Yukiharu

Author_Institution

Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Ikoma, Japan

fYear

2011

fDate

19-20 May 2011

Firstpage

46

Lastpage

47

Abstract

We investigate the characterization of thin film devices using double-layered polycrystalline silicon (poly-Si) films formed by green laser annealing. The simultaneous crystallization of the double-layered substrate was achieved. The crystalline quality of the upper poly-Si layer is slightly higher than that of the single-layered poly-Si films. Thin film transistors (TFTs) and thin film photo diodes (TFPDs) have been fabricated on the double-layered poly-Si films. TFTs and TFPDs show device operation.

Keywords

laser beam annealing; photodiodes; thin film transistors; double-layered polycrystalline silicon films; green laser annealing; photodiodes; thin film transistors; Annealing; Crystallization; Films; Lasers; Silicon; Thin film transistors; green laser annealing; simultaneous crystallization; thin film device;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-61284-145-8

Electronic_ISBN

978-1-61284-147-2

Type

conf

DOI

10.1109/IMFEDK.2011.5944837

Filename

5944837