DocumentCode
2116379
Title
New statistical optimization method in fabricating 65nm MOSFET transistors using Monte Carlo and Dual Pearson models
Author
Lin, Jia-Chun ; Chen, Chu-Yu ; Tsa, Meng-Hua
Author_Institution
Dept. of Electr. Eng., Nat. Univ. of Tainan, Tainan, Taiwan
fYear
2011
fDate
19-20 May 2011
Firstpage
52
Lastpage
53
Abstract
In this paper, a new statistical analysis method is presented to investigate the effect of nine factors in the 65nm MOSFET structure. The aim of this work is to clarify the electrical properties, correlation of the principal factors, based on exploratory factor analysis (EFA). From the simulation result, optimization parameters are determinative to achieve the objective.
Keywords
MOSFET; Monte Carlo methods; optimisation; statistical analysis; EFA; MOSFET structure; MOSFET transistors; Monte Carlo models; dual Pearson models; exploratory factor analysis; size 65 nm; statistical analysis method; statistical optimization method; Doping; Guidelines; MOSFET circuits; Monte Carlo methods; Semiconductor process modeling; Simulation; Threshold voltage; EFA; MOSFET; SPSS; Silvaco TCAD; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location
Osaka
Print_ISBN
978-1-61284-145-8
Electronic_ISBN
978-1-61284-147-2
Type
conf
DOI
10.1109/IMFEDK.2011.5944840
Filename
5944840
Link To Document