Title :
A novel bootstrapped switch
Author :
Hu, Rongbin ; Tang, Jie
Author_Institution :
Sichuan Inst. of Solid State Circuits, Chongqing, China
Abstract :
A novel bootstrapped switch is introduced in this paper. At first, the mathematics built in the bootstrapped switch is discussed Secondly, the prototype of the bootstrapped switch is described. At last, the transistor-level circuit of the bootstrapped switch is given. The performance of the bootstrapped switch is tested indirectly by stimulating a sampling and holding circuit containing the bootstrapped switch. The stimulated results show that the bootstrapped switch has a performance with SFDR more than 89dBc, and SNR bigger than 79dB.
Keywords :
field effect transistor switches; sample and hold circuits; switched capacitor networks; NMOS; bootstrapped switch; sampling and holding circuit; switched capacitor circuit; transistor-level circuit; Capacitors; Logic gates; MOSFETs; Power supplies; Switches; Switching circuits; S/H circuit; bootstrapped circuit; charge pump;
Conference_Titel :
Consumer Electronics, Communications and Networks (CECNet), 2012 2nd International Conference on
Conference_Location :
Yichang
Print_ISBN :
978-1-4577-1414-6
DOI :
10.1109/CECNet.2012.6201615
