Title :
Ultra-fast (325 GHz) near-ballistic uni-traveling-carrier photodiodes with high sub-THz output power under a 50Ω load
Author :
Jin-Wei Shi ; Jhih-Min Wun ; Feng-Wei Lin ; Bowers, John E.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan
Abstract :
We demonstrate near-ballistic uni-traveling-carrier photodiodes with record optical-to-electrical bandwidth (325 GHz) under 50Ω loads. By using a flip-chip bonding package, high photocurrent (16 mA) and record-high photo-generated power (-1.8 dBm) at 325 GHz are achieved.
Keywords :
flip-chip devices; integrated optoelectronics; photodiodes; photoemission; bandwidth 325 GHz; current 16 mA; flip-chip bonding package; high subTHz output power; optical-to-electrical bandwidth; photocurrent; record-high photogenerated power; resistance 50 ohm; ultrafast near-ballistic unitraveling carrier photodiodes; Bandwidth; Bonding; Flip-chip devices; Frequency measurement; Optical waveguides; Power generation; Power measurement;
Conference_Titel :
Photonics Conference (IPC), 2013 IEEE
Conference_Location :
Bellevue, WA
Print_ISBN :
978-1-4577-1506-8
DOI :
10.1109/IPCon.2013.6656583
