Title :
Microscopic electrical characterization of fixed-charge-controlled passivation films for Si solar cells
Author :
Fujieda, J. ; Matsutani, R. ; Hamano, J. ; Yoshida, H. ; Arafune, K. ; Satoh, S. ; Chikyow, T. ; Tachibana, T. ; Ikeno, N. ; Lee, H. ; Ogura, A.
Author_Institution :
Grad. Sch. of Eng., Univ. of Hyogo, Himeji, Japan
Abstract :
A scanning capacitance microscopy (SCM) has been applied to the electrical characterization of passivation films for crystalline Si solar cells. An Y2O3-Al2O3 system, which is a binary composition spread oxide film, was used as a fixed-charge-controlled passivation film. The flat-band voltages of the Y2O3-Al2O3 system were determined from microscopic C-V curves measured by the SCM. The result was in agreement with that of a conventional C-V method. Additionally, the dV/dC images measured by the SCM were investigated for visualizing the spatial distribution of interface trap density.
Keywords :
microscopy; passivation; silicon; solar cells; yttrium compounds; SCM; Si; Y2O3-Al2O3; fixed-charge-controlled passivation films; interface trap density; microscopic C-V curves; microscopic electrical characterization; scanning capacitance microscopy; solar cells; Aluminum oxide; Capacitance-voltage characteristics; Films; Microscopy; Passivation; Silicon; Voltage measurement; SCM; fixed charge; passivation film; solar cells;
Conference_Titel :
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-145-8
Electronic_ISBN :
978-1-61284-147-2
DOI :
10.1109/IMFEDK.2011.5944851
