Title :
Correlation between surface morphology and breakdown characteristics of thermally grown SiO2 dielectrics in 4H-SiC MOS devices
Author :
Uenishi, Yusuke ; Kozono, Kohei ; Mitani, Shuhei ; Nakano, Yuki ; Nakamura, Takashi ; Hosoi, Takuji ; Shimura, Takayoshi ; Watanabe, Heiji
Author_Institution :
Dept. of Mater. & Life Sci., Osaka Univ., Suita, Japan
Abstract :
We have investigated the surface and interface morphology of a thermally grown SiO2/4H-SiC(0001) structure by atomic force microscopy and transmission electron microscopy. It was found that the surface roughness results in thickness fluctuation of thermal SiO2 due to the pronounced oxidation near the steps. Thus, the localized high elevated electric field near the steps accelerates dielectric degradation and hence results in poor gate oxide reliability.
Keywords :
MIS devices; atomic force microscopy; silicon compounds; surface morphology; surface roughness; transmission electron microscopy; AFM; MOS devices; SiO2-SiC; TEM; atomic force microscopy; breakdown characteristics; interface morphology; localized high elevated electric field; surface morphology; surface roughness; thermally grown dielectrics; thickness fluctuation; transmission electron microscopy; Logic gates; Oxidation; Rough surfaces; Silicon carbide; Substrates; Surface morphology; Surface roughness; 4H-SiC; AFM; MOS; TEM; oxide;
Conference_Titel :
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-145-8
Electronic_ISBN :
978-1-61284-147-2
DOI :
10.1109/IMFEDK.2011.5944852
