Correlation between surface morphology and breakdown characteristics of thermally grown SiO2 dielectrics in 4H-SiC MOS devices

Author

Uenishi, Yusuke ; Kozono, Kohei ; Mitani, Shuhei ; Nakano, Yuki ; Nakamura, Takashi ; Hosoi, Takuji ; Shimura, Takayoshi ; Watanabe, Heiji

Author_Institution

Dept. of Mater. & Life Sci., Osaka Univ., Suita, Japan

fYear

2011

fDate

19-20 May 2011

Firstpage

76

Lastpage

77

Abstract

We have investigated the surface and interface morphology of a thermally grown SiO₂/4H-SiC(0001) structure by atomic force microscopy and transmission electron microscopy. It was found that the surface roughness results in thickness fluctuation of thermal SiO₂ due to the pronounced oxidation near the steps. Thus, the localized high elevated electric field near the steps accelerates dielectric degradation and hence results in poor gate oxide reliability.

Keywords

MIS devices; atomic force microscopy; silicon compounds; surface morphology; surface roughness; transmission electron microscopy; AFM; MOS devices; SiO₂-SiC; TEM; atomic force microscopy; breakdown characteristics; interface morphology; localized high elevated electric field; surface morphology; surface roughness; thermally grown dielectrics; thickness fluctuation; transmission electron microscopy; Logic gates; Oxidation; Rough surfaces; Silicon carbide; Substrates; Surface morphology; Surface roughness; 4H-SiC; AFM; MOS; TEM; oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-61284-145-8

Electronic_ISBN

978-1-61284-147-2

Type

conf

DOI

10.1109/IMFEDK.2011.5944852

Filename

5944852