Title :
C-V characterization of n-GaN MOS diodes with an ALD Al2O3 dielectric layer
Author :
Nakane, H. ; Yamada, N. ; Tokuda, H. ; Kuzuhara, M.
Author_Institution :
Grad. Sch. of Eng., Univ. of Fukui, Fukui, Japan
Abstract :
In this paper, an n-GaN metal-oxide-semiconductor (MOS) diode was fabricated using atomic layer deposited (ALD) Al2O3. Prior to Al2O3 deposition, the n-GaN surface was treated with (NH4)2S solution. As a result, interface state density of the treated n/n+-GaN MOS diode was significantly reduced compared to that without (NH4)2S treatment.
Keywords :
III-V semiconductors; MIS devices; alumina; atomic layer deposition; dielectric thin films; gallium compounds; semiconductor diodes; wide band gap semiconductors; ALD dielectric layer; C-V characterization; GaN-Al2O3; atomic layer deposited dielectric layer; metal oxide semiconductor diode; n-GaN MOS diode; Aluminum oxide; Capacitance-voltage characteristics; Gold; Interface states; Logic gates; Semiconductor diodes; Surface treatment; GaN; MOS; diode;
Conference_Titel :
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-145-8
Electronic_ISBN :
978-1-61284-147-2
DOI :
10.1109/IMFEDK.2011.5944855
