Low temperature processed ZnO thin film transistors fabricated by plasma assisted atomic layer deposition

Author

Kawamura, Yumi ; Tani, Mai ; Horita, Masahiro ; Ishikawa, Yasuaki ; Uraoka, Yukiharu

Author_Institution

Grad. Sch. of Mater. Sci., NAIST, Nara, Japan

fYear

2011

fDate

19-20 May 2011

Firstpage

84

Lastpage

85

Abstract

In this study, we fabricated TFTs using ZnO thin film as the channel layer and Al₂O₃ as the gate insulator deposited by plasma assisted ALD (PA-ALD) for low-temperature fabrication process. The PA-ALD ZnO TFTs with PA-ALD AL₂O₃ gate insulator exhibit the excellent TFT device performances without annealing. Through this study, we found that the residual carrier concentration is reduced and the high performance ZnO TFTs are possible to obtain by using PA-ALD at low temperature.

Keywords

II-VI semiconductors; atomic layer deposition; thin film transistors; wide band gap semiconductors; zinc compounds; ZnO-Al₂O₃; channel layer; gate insulator; low temperature fabrication process; low temperature processed thin film transistors; plasma assisted atomic layer deposition; residual carrier concentration; Aluminum oxide; Annealing; Films; Insulators; Logic gates; Thin film transistors; Zinc oxide; Atomic layer deposition; Thin film transistors; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-61284-145-8

Electronic_ISBN

978-1-61284-147-2

Type

conf

DOI

10.1109/IMFEDK.2011.5944856

Filename

5944856