Title :
Low temperature processed ZnO thin film transistors fabricated by plasma assisted atomic layer deposition
Author :
Kawamura, Yumi ; Tani, Mai ; Horita, Masahiro ; Ishikawa, Yasuaki ; Uraoka, Yukiharu
Author_Institution :
Grad. Sch. of Mater. Sci., NAIST, Nara, Japan
Abstract :
In this study, we fabricated TFTs using ZnO thin film as the channel layer and Al2O3 as the gate insulator deposited by plasma assisted ALD (PA-ALD) for low-temperature fabrication process. The PA-ALD ZnO TFTs with PA-ALD AL2O3 gate insulator exhibit the excellent TFT device performances without annealing. Through this study, we found that the residual carrier concentration is reduced and the high performance ZnO TFTs are possible to obtain by using PA-ALD at low temperature.
Keywords :
II-VI semiconductors; atomic layer deposition; thin film transistors; wide band gap semiconductors; zinc compounds; ZnO-Al2O3; channel layer; gate insulator; low temperature fabrication process; low temperature processed thin film transistors; plasma assisted atomic layer deposition; residual carrier concentration; Aluminum oxide; Annealing; Films; Insulators; Logic gates; Thin film transistors; Zinc oxide; Atomic layer deposition; Thin film transistors; Zinc oxide;
Conference_Titel :
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-145-8
Electronic_ISBN :
978-1-61284-147-2
DOI :
10.1109/IMFEDK.2011.5944856
