Preparation of ZnO thin films by plasma-assisted atomic layer deposition for the application to thin film transistors

We investigated the effect of the deposition temperature during plasma-assisted atomic layer deposition (PA-ALD) on the performance of ZnO TFTs. The ZnO TFTs with the channel layers deposited at 300°C exhibited high on-current compared with the TFTs with the channel layers deposited at 100°C. X-ray diffraction measurement, the 300°C-ZnO TFTs films have high crystallinity compared with the 100°C-ZnO films. It suggests that improvement of crystallinity of ZnO films leads to the increase of the on-current.