• DocumentCode
    2116998
  • Title

    Design Considerations for High Efficiency GaAs HBT MMIC Power Amplifiers

  • Author

    Ali, Fazal

  • Author_Institution
    Westinghouse Electric Corporation, Advanced Technology Division, P. O. Box 1521, MS 3K11, Baltimore, Maryland 21203, U.S.A.
  • Volume
    1
  • fYear
    1994
  • fDate
    5-9 Sept. 1994
  • Firstpage
    156
  • Lastpage
    176
  • Abstract
    This paper provides a synopsis of the design considerations for high efficiency, MMIC power amplifiers based on GaAs Heterojunction Bipolar Transistor (HBT) technology. Design issues related to power HBT unit-cell and two stage power amplifiers are addressed.
  • Keywords
    Breakdown voltage; Electronic ballasts; Fingers; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; MMICs; Power amplifiers; Power generation; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1994. 24th European
  • Conference_Location
    Cannes, France
  • Type

    conf

  • DOI
    10.1109/EUMA.1994.337206
  • Filename
    4138251
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2116998