Title :
Design Considerations for High Efficiency GaAs HBT MMIC Power Amplifiers
Author_Institution :
Westinghouse Electric Corporation, Advanced Technology Division, P. O. Box 1521, MS 3K11, Baltimore, Maryland 21203, U.S.A.
Abstract :
This paper provides a synopsis of the design considerations for high efficiency, MMIC power amplifiers based on GaAs Heterojunction Bipolar Transistor (HBT) technology. Design issues related to power HBT unit-cell and two stage power amplifiers are addressed.
Keywords :
Breakdown voltage; Electronic ballasts; Fingers; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; MMICs; Power amplifiers; Power generation; Thermal resistance;
Conference_Titel :
Microwave Conference, 1994. 24th European
Conference_Location :
Cannes, France
DOI :
10.1109/EUMA.1994.337206
