Title :
Resistance switching phenomenon in nano-conduction path formed by dielectric breakdown
Author :
Shimizu, T. ; Shiotani, Y. ; Shimomura, K. ; Shingubara, S. ; Otsuka, S. ; Takase, K.
Author_Institution :
Dept. of Mech. Eng., Kansai Univ., Suita, Japan
Abstract :
Huge magnetoresistance switching phenomenon, whose MR ratio exceeded 300%, was observed in a nano-conduction path (NCP). The ferromagnetic NCP was formed by the use of dielectric breakdown of insulator (SiO2) concomitant with an introduction of ferromagnetic atoms into NCP by electromigration.
Keywords :
electric breakdown; electromigration; ferromagnetic materials; magnetoresistance; nanowires; dielectric breakdown; electromigration; ferromagnetic atoms; magnetoresistance switching phenomenon; nano conduction path; Dielectric breakdown; Electromigration; Magnetic fields; Magnetoresistance; Resistance; Switches; Tunneling; dielectric breakdown; electromigration; magnetoresistance; nanowire;
Conference_Titel :
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-145-8
Electronic_ISBN :
978-1-61284-147-2
DOI :
10.1109/IMFEDK.2011.5944864
