• DocumentCode
    2117023
  • Title

    AlGaAs/GaAs HeteroJunction Bipolar Transistor Technology for Multi-Glga-Samples per Second ADCs

  • Author

    Wang, K.C. ; Nary, K.R. ; Nubling, R.B. ; Beccue, S.M. ; Pierson, R.L. ; Chang, M.F. ; Asbeck, P.M. ; Huang, R.T.

  • Author_Institution
    Rockwell Science Center, Thousand Oaks, CA 91360 USA
  • Volume
    1
  • fYear
    1994
  • fDate
    5-9 Sept. 1994
  • Firstpage
    177
  • Lastpage
    184
  • Abstract
    This paper reports a manufacturable AlGaAs/GaAs heterojunction bipolar (HBT) technology, and development of HBT circuits for analog to digital conversion. HBT voltage comparators operated well above 10 GSps. Sample and hold circuits worked at 2 GSps with less than ¿40 dB distortion. Multi-GSps 4-bit quantizers and 6-bit ADCs were realized. Multi-GSps 8¿bit ADCs as well as high-high-resolution sigma-delta ADCs, based on this HBT technology, are being developed.
  • Keywords
    Analog-digital conversion; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit interconnections; Integrated circuit measurements; Integrated circuit technology; Microelectronics; Pulp manufacturing; Schottky diodes; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1994. 24th European
  • Conference_Location
    Cannes, France
  • Type

    conf

  • DOI
    10.1109/EUMA.1994.337207
  • Filename
    4138252
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2117023