Investigation of SrBi4Ti4O15/CaBi4Ti4O15 thin film capacitor for excellent electric stability

Author

Nomura, Shuhei ; Ou, Syu ; Yamashita, Kaoru ; Noda, Minoru ; Uchida, Hiroshi ; Funakubo, Hiroshi

Author_Institution

Grad. Sch. of Sci. & Technol., Kyoto Inst. of Technol., Kyoto, Japan

fYear

2011

fDate

19-20 May 2011

Firstpage

108

Lastpage

109

Abstract

SrBi₄Ti₄O₁₅ (SBTi) and CaBi₄Ti₄O₁₅ (CBTi) dielectric films of Bismuth Layered Structure Dielectrics (BLSD) are prepared on Pt film for constructing stacked-type dielectric capacitors. Compared to perovskite barium titanate family of (Ba,Sr)TiO₃ (BST) case, it is observed that the SBTi film keeps a low leakage of 10^-7 A/cm² at 250 kV/cm and smaller by an order of magnitude than the BST film, even with thinner thickness in the SBTi film. This indicates that the SBTi film is effective for applying to high permittivity capacitor with the barium perovskite oxide family.

Keywords

bismuth compounds; calcium compounds; dielectric thin films; strontium compounds; thin film capacitors; CaBi₄Ti₄O₁₅; SrBi₄Ti₄O₁₅; bismuth layered structure dielectrics; dielectric films; electric stability; high permittivity capacitor; stacked-type dielectric capacitors; thin film capacitor; Bismuth; Capacitors; Crystals; Dielectric films; Bismuth Layered Structure Dielectrics (BLSD); electric stability; environmentally-resistant; film capacitor;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-61284-145-8

Electronic_ISBN

978-1-61284-147-2

Type

conf

DOI

10.1109/IMFEDK.2011.5944868

Filename

5944868