DocumentCode :
2117104
Title :
Investigation of SrBi4Ti4O15/CaBi4Ti4O15 thin film capacitor for excellent electric stability
Author :
Nomura, Shuhei ; Ou, Syu ; Yamashita, Kaoru ; Noda, Minoru ; Uchida, Hiroshi ; Funakubo, Hiroshi
Author_Institution :
Grad. Sch. of Sci. & Technol., Kyoto Inst. of Technol., Kyoto, Japan
fYear :
2011
fDate :
19-20 May 2011
Firstpage :
108
Lastpage :
109
Abstract :
SrBi4Ti4O15 (SBTi) and CaBi4Ti4O15 (CBTi) dielectric films of Bismuth Layered Structure Dielectrics (BLSD) are prepared on Pt film for constructing stacked-type dielectric capacitors. Compared to perovskite barium titanate family of (Ba,Sr)TiO3 (BST) case, it is observed that the SBTi film keeps a low leakage of 10-7 A/cm2 at 250 kV/cm and smaller by an order of magnitude than the BST film, even with thinner thickness in the SBTi film. This indicates that the SBTi film is effective for applying to high permittivity capacitor with the barium perovskite oxide family.
Keywords :
bismuth compounds; calcium compounds; dielectric thin films; strontium compounds; thin film capacitors; CaBi4Ti4O15; SrBi4Ti4O15; bismuth layered structure dielectrics; dielectric films; electric stability; high permittivity capacitor; stacked-type dielectric capacitors; thin film capacitor; Bismuth; Capacitors; Crystals; Dielectric films; Bismuth Layered Structure Dielectrics (BLSD); electric stability; environmentally-resistant; film capacitor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-145-8
Electronic_ISBN :
978-1-61284-147-2
Type :
conf
DOI :
10.1109/IMFEDK.2011.5944868
Filename :
5944868
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2117104
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