DocumentCode :
2117120
Title :
Comparison Between A Posteriori Error Indicators For Adaptive Mesh Generation In Semiconductor Device Simulation
Author :
Tanaka, K. ; Ciampohni, P. ; Pierantoni, A. ; Baccarani, G.
Author_Institution :
NEC Corporation
fYear :
1993
fDate :
14-15 May 1993
Firstpage :
118
Lastpage :
119
Keywords :
Charge carrier density; Current density; MOSFETs; Mesh generation; Microelectronics; National electric code; Piecewise linear approximation; Poisson equations; Semiconductor devices; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
Type :
conf
DOI :
10.1109/VPAD.1993.724748
Filename :
724748
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2117120
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