DocumentCode :
2117141
Title :
Effects of inserting ultrathin TaOx layer in Pt/TiO2 interface on resistive switching characteristics
Author :
Wei, Guobin ; Murakami, Hideki ; Fujioka, Tomohiro ; Ohta, Akio ; Goto, Yuta ; Higashi, Seiichiro ; Miyazaki, Seiichi
Author_Institution :
Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Hiroshima, Japan
fYear :
2011
fDate :
19-20 May 2011
Firstpage :
110
Lastpage :
111
Abstract :
An ultrathin ~1 nm TaOx layer was inserted at the interface between a top Pt electrode and TiO2 as a restive switching dielectric to investigate resistive switching characteristics. A marked change in the initial resistance state and an improvement of the endurance were observed. These results can be interpreted as due to the TaOx layer working as an oxygen reservoir.
Keywords :
dielectric materials; switches; Pt-TiO2; Pt/TiO2 interface; initial resistance state; oxygen reservoir; resistive switching characteristics; switching dielectric; ultrathin TaOx layer; Bonding; Dielectrics; Electrodes; Nonvolatile memory; Reservoirs; Resistance; Switches; redox reaction; stack structure; tantalum oxide; titanium oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-145-8
Electronic_ISBN :
978-1-61284-147-2
Type :
conf
DOI :
10.1109/IMFEDK.2011.5944869
Filename :
5944869
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2117141
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