Title :
Characteristics of solution-processed TFTs with In4ZnOx/SrTa2O6 thin films
Author :
Lu, Li ; Nishida, Takashi ; Echizen, Masahiro ; Ishikawa, Yasuaki ; Uchiyama, Kiyoshi ; Uraoka, Yukiharu
Author_Institution :
Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Nara, Japan
Abstract :
TFTs with channel layer material of InZn4Ox, and gate insulator materials of SiO2 and SrTa2O6 (STA) were successfully fabricated using solution-process. STA is a high-k material with the dielectric constant of about 40 in amorphous state. Both these two kinds of TFTs are in saturation region at a low drain voltage of 5 V. The on/off current ratios of the TFTs with the gate insulator of SiO2 and STA are 3.8×104 and 3.1×105. One order was increased by using the STA thin films. Meanwhile, the on voltage significantly decreased from -17 V to 1.5 V by using the STA thin films.
Keywords :
thin film transistors; thin films; In4ZnOx-SrTa2O6; STA thin films; channel layer material; dielectric constant; drain voltage; gate insulator material; solution-processed TFT; thin film transistors; Annealing; High K dielectric materials; Insulators; Logic gates; Silicon; Thin film transistors; InZn4Ox; Thin film transistor; gate insulator material; high-k material; solution process;
Conference_Titel :
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-145-8
Electronic_ISBN :
978-1-61284-147-2
DOI :
10.1109/IMFEDK.2011.5944874
