Characteristics of solution-processed TFTs with In4ZnOx/SrTa2O6 thin films

Author

Lu, Li ; Nishida, Takashi ; Echizen, Masahiro ; Ishikawa, Yasuaki ; Uchiyama, Kiyoshi ; Uraoka, Yukiharu

Author_Institution

Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Nara, Japan

fYear

2011

fDate

19-20 May 2011

Firstpage

120

Lastpage

121

Abstract

TFTs with channel layer material of InZn₄O_x, and gate insulator materials of SiO₂ and SrTa₂O₆ (STA) were successfully fabricated using solution-process. STA is a high-k material with the dielectric constant of about 40 in amorphous state. Both these two kinds of TFTs are in saturation region at a low drain voltage of 5 V. The on/off current ratios of the TFTs with the gate insulator of SiO₂ and STA are 3.8×10⁴ and 3.1×10⁵. One order was increased by using the STA thin films. Meanwhile, the on voltage significantly decreased from -17 V to 1.5 V by using the STA thin films.

Keywords

thin film transistors; thin films; In₄ZnO_x-SrTa₂O₆; STA thin films; channel layer material; dielectric constant; drain voltage; gate insulator material; solution-processed TFT; thin film transistors; Annealing; High K dielectric materials; Insulators; Logic gates; Silicon; Thin film transistors; InZn4Ox; Thin film transistor; gate insulator material; high-k material; solution process;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-61284-145-8

Electronic_ISBN

978-1-61284-147-2

Type

conf

DOI

10.1109/IMFEDK.2011.5944874

Filename

5944874