DocumentCode :
2117315
Title :
Effect of uniaxial strain on the electronic transport in single layer graphene
Author :
Ohmi, Yusuke ; Ogawa, Matsuto ; Souma, Satofumi
Author_Institution :
Dept. of Electr. & Electron. Eng., Kobe Univ., Kobe, Japan
fYear :
2011
fDate :
19-20 May 2011
Firstpage :
126
Lastpage :
127
Abstract :
We study the effect of the various types of strain on the electronic band structure and the transport characteristics in graphene. It has been found that the combination of shear and armchair uniaxial deformation is an effective way to open the band gap, meaning the efficient controllability of the electronic current through graphene.
Keywords :
energy gap; graphene; shear deformation; C; armchair uniaxial deformation; band gap; electronic band structure; electronic current; electronic transport; shear uniaxial deformation; single layer graphene; uniaxial strain; Controllability; Lattices; Materials; Photonic band gap; Tensile stress; Uniaxial strain; Graphene; band gap engineering; non-equilibrium Green´s function method; strain engineering; tight-binding method;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-145-8
Electronic_ISBN :
978-1-61284-147-2
Type :
conf
DOI :
10.1109/IMFEDK.2011.5944877
Filename :
5944877
Link To Document :
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