Analysis of hall effect in micro poly-Si Hall devices with p-type doping films for magnetic area sensors

Author

Segawa, Tsuyoshi ; Yamaguchi, Yohei ; Hashimoto, Hayami ; Kimura, Mutsumi

Author_Institution

Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan

fYear

2011

fDate

19-20 May 2011

Firstpage

132

Lastpage

133

Abstract

Hall effect in micro poly-Si Hall devices with p-type doping films is analyzed for magnetic area sensors. Normal Hall voltage (V_H) occurs, and its change is proportional to the magnetic field (B). However, V_H has an offset voltage (V_O) even when B = 0, and V_H continuously varies even when the polarities of B is reversed whereas the polarities of V_H is reversed when the polarities of the control current (I) is reversed. V_O originates from zigzag paths of I. The obtained results suggest the possibility of area sensors using micro poly-Si Hall devices.

Keywords

Hall effect devices; elemental semiconductors; magnetic sensors; microsensors; semiconductor devices; semiconductor doping; semiconductor thin films; silicon; thin film sensors; Hall effect; Hall voltage; Si; magnetic area sensors; magnetic field; micro poly-Si Hall devices; p-type doping films; Films; Grain boundaries; Magnetic devices; Magnetic field measurement; Magnetic sensors; Silicon; Hall device; Hall effect; magnetic area sensor; p-type doping; poly-Si;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-61284-145-8

Electronic_ISBN

978-1-61284-147-2

Type

conf

DOI

10.1109/IMFEDK.2011.5944880

Filename

5944880