Performance evaluation of full SiC switching cell in an interleaved boost converter for PV applications

Author

Ho, Carl N M ; Canales, Francisco ; Pettersson, Sami ; Escobar, Gerardo ; Coccia, Antonio ; Oikonomou, Nikolaos

Author_Institution

Corp. Res., ABB Switzerland Ltd., Baden-Daettwil, Switzerland

fYear

2011

fDate

17-22 Sept. 2011

Firstpage

1923

Lastpage

1927

Abstract

The paper presents device characteristics of a recent developed 1.2 kV silicon carbide (SiC) switching cell and system performance of an interleaved boost converter using that switching cell. The static and dynamic characteristics of the full SiC switching cell, including a SiC MOSFET and a SiC diode, are experimentally extracted and the advantages of the devices are evaluated. A 2.5 kW interleaved boost converter for PV applications is implemented as benchmark test system. It is used to evaluate the system efficiency improvement by using the full SiC switching cell. The experimental results show that the SiC MOSFET greatly improves the efficiency of the converter in contrast to Si 1.2kV IGBT devices.

Keywords

photovoltaic power systems; power MOSFET; silicon compounds; switching convertors; wide band gap semiconductors; IGBT devices; PV system; SiC; SiC MOSFET; SiC diode; benchmark test system; interleaved boost converter; power 2.5 kW; silicon carbide switching cell; voltage 1.2 kV; Inverters; MOSFET circuits; Semiconductor diodes; Silicon; Silicon carbide; Switches; Switching loss;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2011 IEEE

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4577-0542-7

Type

conf

DOI

10.1109/ECCE.2011.6064021

Filename

6064021