Impact of power factor correction and harmonic compensation by STATCOM on converter temperature

Author

GopiReddy, Lakshmi ; Tolbert, Leon M. ; Ozpineci, Burak ; Xu, Yan ; Rizy, Tom

Author_Institution

Electr. Eng. Dept., Univ. of Tennessee, Knoxville, TN, USA

fYear

2011

fDate

17-22 Sept. 2011

Firstpage

1928

Lastpage

1934

Abstract

Most of the failures in IGBTs are caused by thermal fatigue. Hence, the thermal analysis of IGBTs for each particular application is an important step in determining their lifetime. In this paper, the thermal analysis of a STATCOM is presented for two different applications, power factor correction and harmonic elimination. The STATCOM model is developed in EMTP for the above mentioned functions. The analytical equations for average conduction losses in an IGBT and a diode are derived. The electrothermal model is used to estimate the temperature of the IGBT. A comparative analysis of the thermal stresses on the IGBT with various parameters such as power factor, harmonic frequency, and harmonic amplitude is presented as a basis for future reliability testing of IGBTs in FACTS applications.

Keywords

EMTP; insulated gate bipolar transistors; power bipolar transistors; power factor correction; static VAr compensators; EMTP; FACTS applications; IGBT reliability testing; STATCOM model; converter temperature; electrothermal model; harmonic amplitude; harmonic compensation; harmonic frequency; power factor correction; thermal analysis; thermal stress; Automatic voltage control; Harmonic analysis; Insulated gate bipolar transistors; Inverters; Power system harmonics; Reactive power; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2011 IEEE

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4577-0542-7

Type

conf

DOI

10.1109/ECCE.2011.6064022

Filename

6064022