DocumentCode
2117516
Title
Modelling of SiC vertical power DMOSFET structure using the fundamental MOSFET´s set of equations
Author
Lungu, Paul Daniel
Author_Institution
Electron. & Telecommun., Politehnica Univ. of Bucharest, Romania
Volume
2
fYear
1996
fDate
9-12 Oct 1996
Firstpage
327
Abstract
The most important parameters for 6H-SiC and 3C-SiC are extracted from the literature and implemented in an original vertical DMOSFET modeling program using the fundamental set of equations that account for the MOSFET characteristics. A comparison of current-voltage characteristics and specific on resistance for different values of breakdown voltage at two significant temperatures for 6H-SiC, 3C-SiC and Si is provided in this paper
Keywords
electric breakdown; power MOSFET; semiconductor device models; semiconductor device reliability; semiconductor materials; silicon compounds; SiC; breakdown voltage; current-voltage characteristics; fundamental equation set; modeling program; specific on resistance; vertical power DMOSFET structure; Doping; Electrodes; Electrons; Equations; MOSFET circuits; Silicon carbide; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1996., International
Conference_Location
Sinaia
Print_ISBN
0-7803-3223-7
Type
conf
DOI
10.1109/SMICND.1996.557383
Filename
557383
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