Title :
A 30-to-60-GHz Monolithic HEMT Frequency Doubler
Author :
Kawasaki, Yoshihiro ; Shirakawa, Kazuo ; Ohashi, Yoji ; Saito, Tamio
Author_Institution :
Fujitsu Laboratories Ltd., 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan. Tel: +81-44-754-2647 Fax: +81-44-754-2646
Abstract :
Using 0.3-¿m AlGaAs/GaAs HEMT technology, we developed a 30-to-60-GHz monolithic frequency doubler which has a conversion loss of 5 dB and a fundamental signal suppression of 20 dB for a 0-dBm 30-GHz input signal. The doubler´s performance is superior to those using similarly scaled AlGaAs/GaAs HEMT. For the design, we used a nonlinear circuit simulator based on the harmonic balance method, an empirical nonlinear HEMT model, and an electromagnetic field simulator. The calculated and measured results agreed well. We developed this in order to build a 60-GHz AlGaAs/GaAs HEMT-based single-chip monolithic transceiver.
Keywords :
Circuit simulation; Frequency conversion; Gallium arsenide; HEMTs; Impedance; Millimeter wave technology; Nonlinear circuits; Oscillators; Scattering parameters; Transceivers;
Conference_Titel :
Microwave Conference, 1994. 24th European
Conference_Location :
Cannes, France
DOI :
10.1109/EUMA.1994.337230