Title :
Design, Fabrication, and Performance of Monolithic Dielectrically Stabilized PM-HFET Oscillators Up to 60 GHz
Author :
Güttich, U. ; Wenger, J.
Author_Institution :
Deutsche Aerospace A.G., SedanstraÃ\x9fe 10, D-89077 Ulm, Germany
Abstract :
Monolithic HFET dielectrically stabilized oscillators (DROs) are designed based on results obtained, from hybrid HFET DROs /1,2/. The monolithic chips are fabricated using MBE grown 2¿ substrates. The employed low noise quarter micron InGaAs/GaAs pseudomorphic (PM) HFET devices yield fT and fmax values of the least 70 GHz and 140 GHz. State. of-the-art topology DROs show an output power of +11 dBm and +2.3 dBm. at 36 GHz and 62 GHz, respectively. Excellent phase noise data of ¿97 dBc/Hz at 100 kHz off carrier (Ka-band DRO) and ¿101 dBc/Hz at 1 MHz off carrier (V-band DRO) are obtained.
Keywords :
Dielectric substrates; Fabrication; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Oscillators; Phase noise; Power generation; Topology;
Conference_Titel :
Microwave Conference, 1994. 24th European
Conference_Location :
Cannes, France
DOI :
10.1109/EUMA.1994.337235
