Title :
InAs/GaAs quantum-dot lasers and detectors on silicon substrates for silicon photonics
Author :
Lee, Albert ; Mingchu Tang ; Qi Jiang ; Jiang Wu ; Seeds, A. ; Huiyun Liu
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, London, UK
Abstract :
We present the development of InAs/GaAs quantum-dot devices monolithically grown on Si substrates for silicon photonics. Room-temperature cw lasing at 1.3 μm has been demonstrated for the InAs/GaAs quantum-dot devices on Si substrates.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; quantum dot lasers; silicon; InAs-GaAs; Si; quantum-dot devices; quantum-dot lasers; room-temperature cw lasing; silicon photonics; silicon substrates; wavelength 1.3 mum; Gallium arsenide; Laser excitation; Photonics; Semiconductor lasers; Silicon; Substrates; Threshold current;
Conference_Titel :
Photonics Conference (IPC), 2013 IEEE
Conference_Location :
Bellevue, WA
Print_ISBN :
978-1-4577-1506-8
DOI :
10.1109/IPCon.2013.6656643
