Title :
GaAs MESFET Technology based MMICs for Millimetre-Wave Front-ends
Author :
Dieudonné, J.M. ; Klaassen, A. ; Güttich, U. ; Adelseck, B. ; Schroth, J. ; Splettstober, J. ; Colquhoun, A.
Author_Institution :
Deutsche Aerospace AG, Sedanstra?e 10, 89070 Ulm, Germany
Abstract :
The feasability of monolithic millimetre-wave front-ends based on a GaAs MESFET technology has been demonstrated. Different specific MMIC circuit functions have been fabricated using a 0.25 ¿m GaAs MESFET technology. Mixer, doubler and switch MMIC circuits have been realised using Schottky diodes as active elements. The diode performances have been improved by including a selective n+ buried layer for reduction of the series resistance. Voltage controlled oscillator and amplifier have been fabricated using the same technology without n+ layer.
Keywords :
Appropriate technology; Capacitance measurement; Electrical resistance measurement; Fingers; Gallium arsenide; MESFET circuits; MMICs; Schottky diodes; Switches; Voltage;
Conference_Titel :
Microwave Conference, 1994. 24th European
Conference_Location :
Cannes, France
DOI :
10.1109/EUMA.1994.337265
