DocumentCode
2118520
Title
GaAs MESFET Technology based MMICs for Millimetre-Wave Front-ends
Author
Dieudonné, J.M. ; Klaassen, A. ; Güttich, U. ; Adelseck, B. ; Schroth, J. ; Splettstober, J. ; Colquhoun, A.
Author_Institution
Deutsche Aerospace AG, Sedanstra?e 10, 89070 Ulm, Germany
Volume
1
fYear
1994
fDate
5-9 Sept. 1994
Firstpage
534
Lastpage
541
Abstract
The feasability of monolithic millimetre-wave front-ends based on a GaAs MESFET technology has been demonstrated. Different specific MMIC circuit functions have been fabricated using a 0.25 ¿m GaAs MESFET technology. Mixer, doubler and switch MMIC circuits have been realised using Schottky diodes as active elements. The diode performances have been improved by including a selective n+ buried layer for reduction of the series resistance. Voltage controlled oscillator and amplifier have been fabricated using the same technology without n+ layer.
Keywords
Appropriate technology; Capacitance measurement; Electrical resistance measurement; Fingers; Gallium arsenide; MESFET circuits; MMICs; Schottky diodes; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1994. 24th European
Conference_Location
Cannes, France
Type
conf
DOI
10.1109/EUMA.1994.337265
Filename
4138310
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