Title :
Diamond field effect transistors for RF, nano, and bio applications
Author :
Kawarada, H. ; Umezawa, H. ; Song, K.S.
Author_Institution :
Sch. of Sci. & Eng., Waseda Univ., Tokyo, Japan
Abstract :
Using a highly conductive p-type layer appearing on a hydrogen terminated diamond surface, surface channel field effect transistors (FETs) have been developed. This type of FET is applicable in high-frequency devices operating at high power, biosensors in electrolyte solution, and quantum devices such as single-hole transistors fabricated by surface nanotechnology.
Keywords :
biosensors; diamond; field effect transistors; hydrogen; nanoelectronics; wide band gap semiconductors; C; H-terminated surface; RF transistor; bio application; biosensors; conductive p-type layer; diamond; electrolyte solution; field effect transistors; high-frequency devices; high-power operation; hydrogen-terminated surface; nano application; quantum devices; single-hole transistors; surface nanotechnology;
Conference_Titel :
Advances in Carbon Electronics, 2004. The Third International Seminar on
Print_ISBN :
0-86341-462-1
DOI :
10.1049/ic:20040534