DocumentCode :
2118528
Title :
Diamond field effect transistors for RF, nano, and bio applications
Author :
Kawarada, H. ; Umezawa, H. ; Song, K.S.
Author_Institution :
Sch. of Sci. & Eng., Waseda Univ., Tokyo, Japan
fYear :
2004
fDate :
1 Oct. 2004
Firstpage :
61
Lastpage :
83
Abstract :
Using a highly conductive p-type layer appearing on a hydrogen terminated diamond surface, surface channel field effect transistors (FETs) have been developed. This type of FET is applicable in high-frequency devices operating at high power, biosensors in electrolyte solution, and quantum devices such as single-hole transistors fabricated by surface nanotechnology.
Keywords :
biosensors; diamond; field effect transistors; hydrogen; nanoelectronics; wide band gap semiconductors; C; H-terminated surface; RF transistor; bio application; biosensors; conductive p-type layer; diamond; electrolyte solution; field effect transistors; high-frequency devices; high-power operation; hydrogen-terminated surface; nano application; quantum devices; single-hole transistors; surface nanotechnology;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Advances in Carbon Electronics, 2004. The Third International Seminar on
ISSN :
0537-9989
Print_ISBN :
0-86341-462-1
Type :
conf
DOI :
10.1049/ic:20040534
Filename :
1514759
Link To Document :
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