• DocumentCode
    2118528
  • Title

    Diamond field effect transistors for RF, nano, and bio applications

  • Author

    Kawarada, H. ; Umezawa, H. ; Song, K.S.

  • Author_Institution
    Sch. of Sci. & Eng., Waseda Univ., Tokyo, Japan
  • fYear
    2004
  • fDate
    1 Oct. 2004
  • Firstpage
    61
  • Lastpage
    83
  • Abstract
    Using a highly conductive p-type layer appearing on a hydrogen terminated diamond surface, surface channel field effect transistors (FETs) have been developed. This type of FET is applicable in high-frequency devices operating at high power, biosensors in electrolyte solution, and quantum devices such as single-hole transistors fabricated by surface nanotechnology.
  • Keywords
    biosensors; diamond; field effect transistors; hydrogen; nanoelectronics; wide band gap semiconductors; C; H-terminated surface; RF transistor; bio application; biosensors; conductive p-type layer; diamond; electrolyte solution; field effect transistors; high-frequency devices; high-power operation; hydrogen-terminated surface; nano application; quantum devices; single-hole transistors; surface nanotechnology;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Advances in Carbon Electronics, 2004. The Third International Seminar on
  • ISSN
    0537-9989
  • Print_ISBN
    0-86341-462-1
  • Type

    conf

  • DOI
    10.1049/ic:20040534
  • Filename
    1514759