DocumentCode :
2118986
Title :
Lifetime Prediction Model For Analog Devices Based On Drain Conductance Degradation Due To Hot Carrier Injection
Author :
Kurachi, Ikuo ; Hwang, Nam ; Forbes, Leonard
Author_Institution :
Oregon State University
fYear :
1993
fDate :
14-15 May 1993
Firstpage :
130
Lastpage :
131
Keywords :
Degradation; Equations; Guidelines; Hot carrier injection; Integrated circuit reliability; Interface states; MOSFET circuits; Predictive models; Stress; Substrate hot electron injection;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
Type :
conf
DOI :
10.1109/VPAD.1993.724754
Filename :
724754
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2118986
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