• DocumentCode
    21190
  • Title

    Method to Simulate Rise Time of Current Drawn by a Microprocessor

  • Author

    Bhattacharyya, Bidyut K. ; Baral, Debasis

  • Author_Institution
    NIT Agartala, India & Torit, San Jose, CA, USA
  • Volume
    3
  • Issue
    10
  • fYear
    2013
  • fDate
    Oct. 2013
  • Firstpage
    1731
  • Lastpage
    1736
  • Abstract
    We have developed a new method to simulate the effective rise time of current drawn by each cell in a microprocessor so that the total noise is consistent with values measured at the power and ground reference points inside the die. Normally, the measured values are much smaller than simulated values. In this paper, several exponential functions with varying time constants are staggered and combined at different starting time values to generate the effective current profile which was used for noise estimation. The model utilizes a realistic jitter-based distribution function compared to a step function used in existing models for the initial small amount of saturated current ramp. The practical model developed in this paper is useful for optimizing the cost and performance of microprocessors.
  • Keywords
    integrated circuit noise; jitter; microprocessor chips; power supply circuits; semiconductor device models; semiconductor device noise; current ramp; effective current rise time simulation; exponential functions; jitter-based distribution function; microprocessor; noise estimation; semiconductor device; step function; time constants; CMOS integrated circuits; Capacitance; Clocks; Current measurement; Logic gates; Noise; Power supplies; Average power drawn by CMOS device; current ramp generation; microprocessor currrent simulation; noise simulation; power delivery; power delivery network (PDN); rise time of current; stastical process for power delivery;
  • fLanguage
    English
  • Journal_Title
    Components, Packaging and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    2156-3950
  • Type

    jour

  • DOI
    10.1109/TCPMT.2013.2245945
  • Filename
    6502212