Title :
Very Low-Intermodulation GaAs Mixers with Negative Feedback
Author :
Onodera, Kiyonitsu ; Muraguchi, Masahir
Author_Institution :
NTT LSI Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan
Abstract :
A novel circuit configuration for GaAs FET mixers is proposed. An RC negative feedback technique on the drain LO injection GaAs FET mixer brings about substantial improvement in the 3rd-order intermodulation distortion property without conversion gain falloff. This effect is still more remarkable with higher LO power at the drain. Measured performance of a fabricated 1.9-GHz-band MMIC GaAs FET mixer shows more than an 8-dB improvement in the 3rd-order intermodulation intercept point over a conventional GaAs FET mixer with increased conversion gain.
Keywords :
Capacitance; Equivalent circuits; FETs; Gallium arsenide; Intermodulation distortion; L-band; Laboratories; Negative feedback; Radio frequency; Threshold voltage;
Conference_Titel :
Microwave Conference, 1994. 24th European
Conference_Location :
Cannes, France
DOI :
10.1109/EUMA.1994.337283
