• DocumentCode
    2119053
  • Title

    8-12GHz VCO with SiGe Heterojunction Bipolar Transistor

  • Author

    Gruhle, A. ; Kibbel, H. ; Speck, R.

  • Author_Institution
    Dornier, D-88039 Friedrichshafen, Germany
  • Volume
    1
  • fYear
    1994
  • fDate
    5-9 Sept. 1994
  • Firstpage
    648
  • Lastpage
    657
  • Abstract
    A hybrid 8-12 GHz VCO has been built using a SiGe heterojunction bipolar transistor (HBT) in common-emitter-configuration. In order to achieve the wide frequency range only lumped elements were used. Transistors and varactors were fabricated on the same high-resistivity substrate using the same MBE-grown layers. The chosen doping profile resulted in a linear dependence of the output frequency on the varactor voltage.
  • Keywords
    Capacitance; Circuits; Doping profiles; Fabrication; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Varactors; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1994. 24th European
  • Conference_Location
    Cannes, France
  • Type

    conf

  • DOI
    10.1109/EUMA.1994.337284
  • Filename
    4138329
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2119053