Electrical Properties of Si-Doped AlSb Polycrystalline Films by Co-Sputtering

Si-doped AlSb polycrystalline films were grown on silex by magnetron co-sputtering. The conducting type, Hall mobility and carrier concentration of the films were determined. The films appear to be p-type indicating Si is shown to be predominantly an acceptor in AlSb, and holes as dominant charge carriers. Scanning electronic microscope (SEM) shows that prepared film is uniform and compact. The conductivity activation energy calculation result reveals the Si acceptor level is very close to the top of the valence band.