DocumentCode

2119239

Title

An Analytical Delayed-turn-on Model For Accumulation-type Ultra-thin SOI PMOS Devices Operating At 77K

Author

Sim, J.H. ; Kuo, J.B.

Author_Institution

National Taiwan University

fYear

1993

fDate

14-15 May 1993

Firstpage

132

Lastpage

133

Keywords

Analytical models; Delay; Doping; MOS devices; Nitrogen; Silicon; Substrates; Temperature; Thin film devices; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on

Print_ISBN

0-7803-1338-0

Type

conf

DOI

10.1109/VPAD.1993.724755

Filename

724755