Title :
A PIN Diode SiGe HBT Variable Gain Amplifier for WCDMA Applications
Author :
Gan, Jun-Ning ; Zhang, Wan-Rong ; Xie, Hong-Yun ; Jin, Dong-yue ; Shen, Pei ; Li, Jia ; Huang, Lu ; Huang, Yi-Wen ; Hu, Ning
Author_Institution :
Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing
Abstract :
We report a novel PIN diode SiGe HBT variable gain amplifier (VGA) suited for the standard of WCDMA. The PIN diode which is employed in the feedback loop of the VGA play as a variable resistor to realize the gain control function. By adjusting the bias of the diode, the gain of the VGA can be changed. An inductor is utilized in the feedback loop to reduce the noise figure of the circuit. After matching the circuit, we get a variable gain amplifier with 21 dB dynamic range, about 19 dB maximum gain, and 2.6 dB minimum noise figure. This work demonstrates a new method controlling the gain by adding a PIN diode in the feedback loop except changing the bias of the transistor.
Keywords :
Ge-Si alloys; amplifiers; code division multiple access; heterojunction bipolar transistors; p-i-n diodes; HBT variable gain amplifier; PIN diode; SiGe; WCDMA application; gain control; heterojunction bipolar transistors; inductor; Diodes; Feedback loop; Gain control; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Multiaccess communication; Noise figure; Resistors; Silicon germanium; PIN; SiGe HBT; Variable Gain Amplifier;
Conference_Titel :
Communication Software and Networks, 2009. ICCSN '09. International Conference on
Conference_Location :
Macau
Print_ISBN :
978-0-7695-3522-7
DOI :
10.1109/ICCSN.2009.153
