• DocumentCode
    2119482
  • Title

    Plasmonic signal amplification by monolithically integrated metal-oxide-semiconductor field-effect transistors

  • Author

    Aihara, Takuma ; Takeda, Akiko ; Fukuhara, Masashi ; Ishii, Y. ; Fukuda, Motohisa

  • Author_Institution
    Dept. of Electr. & Electron. Inf. Eng., Toyohashi Univ. of Technol., Toyohashi, Japan
  • fYear
    2013
  • fDate
    8-12 Sept. 2013
  • Firstpage
    566
  • Lastpage
    567
  • Abstract
    A gold/silicon Schottky-type plasmonic detector was monolithically integrated with two metal-oxide-semiconductor field-effect transistors (MOSFETs) on a silicon substrate. The output current from the detector was amplified 14000 times by using the MOSFETs.
  • Keywords
    MOSFET; Schottky gate field effect transistors; gold; plasmonics; silicon; Au-Si; MOSFET; Si; gold-silicon Schottky-type plasmonic detector; monolithically integrated metal-oxide-semiconductor field-effect transistors; plasmonic signal amplification; silicon substrate; Detectors; Gold; Logic gates; MOSFET; Plasmons; Silicon; Voltage measurement; MOSFET; Schottky diode; grating; nano-slit; surface plasmon polariton;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2013 IEEE
  • Conference_Location
    Bellevue, WA
  • Print_ISBN
    978-1-4577-1506-8
  • Type

    conf

  • DOI
    10.1109/IPCon.2013.6656689
  • Filename
    6656689
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2119482